Product Summary

The IRF9Z24S is a Single P-Channel HEXFET Power MOSFET. The IRF9Z24S utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that the IRF9Z24S is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Parametrics

IRF9Z24S absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V:-11A; (2)Continuous Drain Current, VGS @ 10V:-7.7A; (3)Pulsed Drain Current:-44A; (4)Power Dissipation:3.7W or 60W; (5)Linear Derating Factor:0.40W/℃; (6)Gate-to-Source Voltage:±20V; (7)Single Pulse Avalanche Energy:240mJ; (8)Avalanche Current:-11A; (9)Repetitive Avalanche Energy:6.0mJ; (10)Peak Diode Recovery dv/dt:-4.5V/ns; (11)Operating Junction and Storage Temperature Range:-55 to +175℃.

Features

IRF9Z24S features: (1)Advanced Process Technology; (2)Surface Mount; (3)175℃ Operating Temperature; (4)Fast Switching; (5)P- Channel; (6)Fully Avalanche Rated.

Diagrams

IRF9Z24S circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRF9Z24S
IRF9Z24S
Vishay/Siliconix
MOSFET P-Chan 60V 11 Amp
Data Sheet
Negotiable 
IRF9Z24SPBF
IRF9Z24SPBF
Vishay/Siliconix
MOSFET P-Chan 60V 11 Amp
Data Sheet
0-1: $0.94
1-10: $0.84
10-100: $0.75
100-250: $0.67
IRF9Z24STRRPBF
IRF9Z24STRRPBF
Vishay/Siliconix
MOSFET P-Chan 60V 11 Amp
Data Sheet
0-1: $0.94
1-10: $0.74
10-25: $0.73
25-100: $0.71
IRF9Z24STRLPBF
IRF9Z24STRLPBF
Vishay/Siliconix
MOSFET P-Chan 60V 11 Amp
Data Sheet
Negotiable 
IRF9Z24STRR
IRF9Z24STRR
Vishay/Siliconix
MOSFET P-Chan 60V 11 Amp
Data Sheet
Negotiable 
IRF9Z24STRL
IRF9Z24STRL

MOSFET P-CH 60V 11A D2PAK
Data Sheet
Negotiable