(China (Mainland))
Product Summary
The FDS6690A is an N-Channel Logic Level MOSFET, which is produced using Fairchild Semiconductor advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. The FDS6690A is well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
Parametrics
FDS6690A absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ±20 V; (3)Drain Current: Continuous: 11 A, Pulsed: 50 A; (4)Power Dissipation for Single Operation PD: 2.5 W, 1.0 W; (5)Single Pulse Avalanche Energy: 96 mJ; (6)Operating and Storage Junction Temperature Range: –55 to +150 ℃.
Features
FDS6690A features: (1)11 A, 30 V. RDS(ON) = 12.5 mW @ VGS = 10 V, RDS(ON) = 17.0 mW @ VGS = 4.5 V; (2)Fast switching speed; (3)Low gate charge; (4)High performance trench technology for extremely low RDS(ON); (5)High power and current handling capability.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
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 FDS6690A |
Fairchild Semiconductor |
MOSFET SO-8 SGL N-CH 30V |
Data Sheet |
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FDS6690A_Q |
Fairchild Semiconductor |
MOSFET SO-8 SGL N-CH 30V |
Data Sheet |
Negotiable |
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FDS6690AS |
Fairchild Semiconductor |
MOSFET 30V NCH POWER TRENCH SYNCFET |
Data Sheet |
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FDS6690AS_NBNU001 |
Fairchild Semiconductor |
MOSFET 30V N-Ch PowerTrench |
Data Sheet |
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